PART |
Description |
Maker |
NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 10 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES 12 V, 500 mA, gold bonded germanium diode 50 V, 500 mA, gold bonded germanium diode 75 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode 125 V, 500 mA, gold bonded germanium diode 85 V, 500 mA, gold bonded germanium diode 30 V, 500 mA, gold bonded germanium diode 40 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC BKC International Electronics List of Unclassifed Man...
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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
BFP62010 |
NPN Silicon Germanium RF Transistor C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
1N3470 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
OA79 |
Germanium Diode
|
ETC
|
OA95/05 |
Diode Germanium
|
ETC
|
|